 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon npn power transistor BU2708DX description high switching speed high voltage built-in ddamper ddiode applications designed for use in horizontal def lection circuits of color tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage(v be = 0) 1700 v v ceo collector-emitter voltage 825 v v ebo emitter-base voltage 7.5 v i c collector current- continuous 8 a i cm collector current-peak 15 a i b b base current- continuous 4 a i bm base current-peak 6 a p c collector power dissipation @ t c =25 45 w t j junction temperature 150 t stg storage temperature range -65~150 symbol parameter max unit r th j-c thermal resistance,junction to case 2.8 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU2708DX electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 600ma; i c = 0 7.5 v v ce (sat) collector-emitter saturation voltage i c = 4a; i b = 1.33a b 1.0 v v be (sat) base-emitter saturation voltage i c = 4a; i b = 1.33a b 1.0 v i ces collector cutoff current v ce = 1700v ; v be = 0 v ce = 1700v ; v be = 0; t c =125 1.0 2.0 ma h fe-1 dc current gain i c = 1a ; v ce = 5v 15 h fe-2 dc current gain i c = 4a ; v ce = 1v 3 7.3 v ecf c-e diode forward voltage i f = 4a 1.6 v isc website www.iscsemi.cn 2 |
Price & Availability of BU2708DX
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |